IRFL024ZTR - 55V N-ChanneI MOSFET

General Description

This Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. 2.2Features Advanced Process Technology Ultra Low On-Resistance 2.1Features VDS (V)=55V ID=5.1A(VGS=10V) RDS(ON)≤57.5mΩ(VGS=10V) 150°C Operating Temperature Fast Switching 3.Pinning information 4D D Pin Symbol.

IRFL024ZTR 55v n-channei mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	IRFL024ZTR
Manufacturer	UMW
File Size	291.05 KB
Description	55V N-ChanneI MOSFET
Datasheet	IRFL024ZTR Datasheet

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UMW IRFL024ZTR 55V N-ChanneI MOSFET 1.Description This Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. 2.2Features Advanced Process Technology Ultra Low On-Resistance 2.1Features VDS (V)=55V ID=5.1A(VGS=10V) RDS(ON)≤57.5mΩ(VGS=10V) 150°C Operating Temperature Fast Switching 3.Pinning information 4D D Pin Symbol Description SOT-223 top view 1 G GATE 2,4 D DRAIN 1 2 3 G 3 S SOURCE G DS S 4.