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UBT26A05L03 - Low Capacitance 2-Line ESD Protection

General Description

UBT26A05L03 is designed to protect high speed data interfaces.It has been specifically designed to protect sensitive components which is connected to data and transmission lines from overvoltage caused by electrostatic discharge (ESD), electrical fast transients(EFT), and lightning.Low Capacitance 2

Key Features

  • SOT23-6L surface mount package Protects three data lines Working voltage: 5V Low leakage current Low clamping voltage Solid-state silicon avalanche technology Lead Free/RoHS compliant Solder reflow temperature: Pure Tin-Sn 260~270°C I/O1 VBUS I/O2 I/O1 GND I/O2 SOT23-6 4.Absolute Maximum Ratings TA= 25°C Parameter Peak pulse current (tp=8/20μs) ESD voltage (Contact discharge) ESD voltage (Air discharge) Storage temperature range Symbol Ipp VESD TJ, TSTG Value 5 ±8 ±15 -55 to 150 Units A kV.

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Datasheet Details

Part number UBT26A05L03
Manufacturer UMW
File Size 190.88 KB
Description Low Capacitance 2-Line ESD Protection
Datasheet download datasheet UBT26A05L03 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW UBT26A05L03 Low Capacitance 2-Line ESD Protection 1.Description UBT26A05L03 is designed to protect high speed data interfaces.It has been specifically designed to protect sensitive components which is connected to data and transmission lines from overvoltage caused by electrostatic discharge (ESD), electrical fast transients(EFT), and lightning.Low Capacitance 2-Line ESD ProtectionUMW UBT26A05L03www.u 3.Pinning information 2.Features SOT23-6L surface mount package Protects three data lines Working voltage: 5V Low leakage current Low clamping voltage Solid-state silicon avalanche technology Lead Free/RoHS compliant Solder reflow temperature: Pure Tin-Sn 260~270°C I/O1 VBUS I/O2 I/O1 GND I/O2 SOT23-6 4.