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CL616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6.9mΩ @VGS = 10V
ID 50A
PDFN 5X 6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
50 31.5 120
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
13 10.5
Avalanche Current
IAS 24
Avalanche Energy
L =0.1mH
EAS
28.5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.5
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.2 1.
CL616BA Datasheet
