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P0120HLB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
1.4Ω @VGS = 10V
ID 0.8A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
0.8 0.7
Pulsed Drain Current1
IDM 3.5
Avalanche Current
IAS 2.6
Avalanche Energy
L = 1mH
EAS
3.4
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.4 1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 53 °C / W
REV 1.
P0120HLB Datasheet
