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P0403BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID 18A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
18 15 80
Avalanche Current
IAS 50
Avalanche Energy
L = 0.3mH
EAS
380
Power Dissipation
TA= 25 °C TA =70 °C
PD
2.5 1.6
Junction & Storage Temperature Range Lead Temperature(1/16” from case for 10 sec)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P0403BVG Datasheet
