UNIKC P0460AS
N-Channel MOSFET
| Part No. | P0460AS |
|---|---|
| Datasheet | P0460AS Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 4 2.5 20 4 80 Power DissipationA TC = 25 °C TC = 100 °C PD 75 48 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.67 62.5 UNITS °C / W Ver 1.0 1 2012/4/12 P0460AS / P0460AT N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, U
