UNIKC P0465CS
N-Channel MOSFET
| Part No. | P0465CS |
|---|---|
| Datasheet | P0465CS Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 Avalanche Current2 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy2 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 71 28 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2 VDD=50V ,L=10mH,Starting Tj =25 °C. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.75 °C / W REV 1.0 1 2014-3-20 P0465CS N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Volt
