Click to expand full text
P0460BTF / P046BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
2.6Ω @VGS = 10V
4A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
4 1.5
IDM
16
Avalanche Current
IAS
4
Avalanche Energy
L = 10mH
EAS
81
Power Dissipation
TC = 25 °C
PD
25
TC = 100 °C
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
P046BTFS Datasheet
