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P0610BT - N-Channel MOSFET

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Part number P0610BT
Manufacturer UNIKC
File Size 710.06 KB
Description N-Channel MOSFET
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P0610BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 6.5mΩ @VGS = 10V ID2 120A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 120 76 375 Avalanche Current IAS 39 Avalanche Energy L = 1mH EAS 770 Power Dissipation TC = 25 °C TC = 100 °C PD 208 83 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 110A.
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