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P062ABD8
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 6mΩ @VGS = 10V
ID 60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
60 38 150
Avalanche Current
IAS 30
Avalanche Energy
L=0.1mH
EAS
131
Power Dissipation
TC= 25 °C TC= 100°C
PD
36 14
Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.5 40
UNITS °C / W
REV 1.
P062ABD8 Datasheet
