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P0703ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ @VGS = -10V
ID -68A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
-68 -43 -160
Avalanche Current
IAS -65
Avalanche Energy
L=0.1mH
EAS
214
Power Dissipation
TC= 25 °C TC= 100°C
PD
60 24
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2The maximum current rating is package limited.
SYMBOL RqJC
TYPICAL MAXIMUM UNITS 2.
P0703ED Datasheet
