UNIKC P0770ETF
N-Channel MOSFET
| Part No. | P0770ETF |
|---|---|
| Datasheet | P0770ETF Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 7 4 20 2.2 24 Power Dissipation TC = 25 °C TC = 100 °C PD 43 17 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.9 62.5 UNITS °C / W REV 1.1 1 2015/12/17 P0770ETF / P0770ETFS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERI
