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P0780ATF/P0780ATFS
N-Channel High Voltage Mode Field Effect Transistor
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
800V
1.94Ω @VGS = 10V
ID 7A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 800
Gate-Source Voltage
VGS ±30
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
7 4 21
Avalanche Energy3
EAS 61
Power Dissipation
TC = 25 °C TC = 100 °C
PD
57 23
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.
P0780ATF Datasheet
