Full PDF Text Transcription for P0950ETF (Reference)
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P0950ETF / P0950ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 0.88Ω @VGS = 10V 9A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C ...
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Ω @VGS = 10V 9A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 9 5.7 IDM 36 IAS 4 EAS 80 Power Dissipation TC = 25 °C PD 37 TC = 100 °C 15 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temp
P0950ETF Datasheet
