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P1060ATF(S)
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω @VGS = 10V
ID 10A
100% UIS tested
TO-220F(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3
TC= 25 °C TC= 100 °C
ID
IDM IAS
10 6.2 31 8.9
Avalanche Energy3
EAS 396
Power Dissipation
TC= 25 °C TC= 100°C
PD
40 16
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
Mounting Torque4
Machine Screw
4.3 0.5
UNITS V
A
mJ W °C lbf.in N.m
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P1060ATF Datasheet
