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P1103BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 11mΩ @VGS = 10V
ID 37A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
37
Continuous Drain Current1,2
TC = 100 °C TA = 25 °C
ID
23 12
Pulsed Drain Current1
TA = 70 °C
IDM
9 100
Avalanche Current
IAS 30
Avalanche Energy
L = 0.1mH
EAS
45
TC = 25 °C
26
Power Dissipation
TC = 100 °C TA = 25 °C
PD
10 2.7
TA = 70 °C
1.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P1103BEA Datasheet
