UNIKC P1103BEA
MOSFET
| Part No. | P1103BEA |
|---|---|
| Datasheet | P1103BEA Download |
| Manufacturer |  UNIKC |
| Description | MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 37 Continuous Drain Current1,2 TC = 100 °C TA = 25 °C ID 23 12 Pulsed Drain Current1 TA = 70 °C IDM 9 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 45 TC = 25 °C 26 Power Dissipation TC = 100 °C TA = 25 °C PD 10 2.7 TA = 70 °C 1.7 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/6/18 P1103BEA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 Junction-to-Case RqJA RqJC 45 °C / W 4.8 1Pulse width limited by maximum junction temperature. 2The maximum current rating in limited by wires-bond. 3The value o
