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P1210BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID 40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
40 26 110
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
12 9.4
Avalanche Current
IAS 20
Avalanche Energy
L = 1mH EAS 200
Power Dissipation
TC = 25 °C TC = 100 °C
PD
40 20
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
4.1 2.
P1210BK Datasheet
