The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P1260AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
0.65Ω @VGS = 10V
12A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
12 8.5
IDM
48
IAS
7.4
L = 10mH
EAS
277
Power DissipationA
TC = 25 °C
PD
223
TC = 100 °C
89
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P1260AT Datasheet
