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P1503BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID 10A
SOP- 08
100% Rg tested
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage Gate-Source Voltage
VDS
30 V
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
10 8
A 40
Avalanche Current
IAS 10
Avalanche Energy
L = 0.1mH
EAS
5 mJ
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 W
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P1503BVG Datasheet
