The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P1504HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 23mΩ @VGS = 10V
ID 7A
SOP-8
100% UIS tested 100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA= 100 °C
ID IDM
7 4 30
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1 mH
EAS
41
Power Dissipation
TA = 25 °C TA= 100°C
PD
2 0.8
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJL RqJA
TYPICAL
MAXIMUM 25 62.
P1504HV Datasheet
