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P1520ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
198mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
15 9.3 45
Avalanche Current
IAS 15
Avalanche Energy
L=1.2mH EAS 135
Power Dissipation
TC= 25 °C TC= 100°C
PD
83 33
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 1.5 62.5
UNITS °C / W
REV 1.
P1520ED Datasheet
