UNIKC P1525EDB
N-Channel MOSFET
| Part No. | P1525EDB |
|---|---|
| Datasheet | P1525EDB Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC= 25 °C TC= 100 °C ID IDM IAS 15 9.4 60 7.6 Avalanche Energy L= 1mH EAS 29 Power Dissipation TC= 25 °C TC= 100°C Operating Junction & Storage Temperature Range PD Tj, Tstg 73 29 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.7 62.5 UNITS °C / W REV 1.1 1 2016/6/28 P1525EDB N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Vol
