Full PDF Text Transcription for P1610AD (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
P1610AD. For precise diagrams, and layout, please refer to the original PDF.
P1610AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 110V 16mΩ @VGS = 10V ID 45A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)...
View more extracted text
5A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 110 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 45 28 80 Avalanche Current IAS 13.7 Avalanche Energy2 EAS 93 Power Dissipation TC= 25 °C TC= 100°C PD 83 33 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=1mH,VDD=50V SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.5 °C / W REV 1.
P1610AD Datasheet
