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P1650GTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
500V
360mΩ @VGS = 10V
16A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
16 10
IDM
60
IAS
9
EAS
410
Power Dissipation
TC = 25 °C
PD
TC = 100 °C
56.8 22.7
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P1650GTF Datasheet
