Full PDF Text Transcription for P1650GTF (Reference)
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P1650GTF. For precise diagrams, and layout, please refer to the original PDF.
P1650GTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 360mΩ @VGS = 10V 16A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Not...
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16A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 16 10 IDM 60 IAS 9 EAS 410 Power Dissipation TC = 25 °C PD TC = 100 °C 56.8 22.7 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P1650GTF Datasheet
