UNIKC P2003ETF
P-Channel MOSFET
| Part No. | P2003ETF |
|---|---|
| Datasheet | P2003ETF Download |
| Manufacturer |  UNIKC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -26 -16 -120 Avalanche Current IAS -31.4 Avalanche Energy L = 0.1mH EAS 49.5 Power Dissipation TC = 25 °C PD 29 TC = 100 °C 12 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 4.2 °C / W 62.5 Rev 1.0 1 2014/11/17 P2003ETF P-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V -30 V -1 -1.5 -3 ±1...
