The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P2060ZT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
190mΩ @VGS = 10V
20A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
20 12
IDM
59
IAS
4
EAS
320
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.
P2060ZT Datasheet
