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P2610AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID 32A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current Avalanche Energy
TC = 25 °C TC = 100 °C
L = 0.1mH
ID
IDM IAS EAS
32 20 100 53 139
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
PD
TJ, TSTG TL
42 17 -55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA RqCS
TYPICAL 0.
P2610AI Datasheet
