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P261AFEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-12V
20mΩ @VGS = -4.5V
ID -32A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -12 VGS ±8
TC = 25 °C
-32
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C TA = 70 °C
ID
IDM IAS
-20 -9 -7 -60 -36.7
Avalanche Energy
L = 0.1mH
EAS
67.5
TC = 25 °C
31
Power Dissipation
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
12 2 1.3 -55 to 150
UNITS V
A
mJ W °C
REV 1.
P261AFEA Datasheet
