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P2703BAG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 27mΩ @VGS = 10V
ID 7A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2 Avalanche Current Avalanche Energy
TA = 25 °C TA = 70 °C
L = 0.1mH
ID
IDM IAS EAS
7 4.5 35 17 15
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
2 0.8 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 30 62.5
UNITS °C / W
Ver 1.
P2703BAG Datasheet
