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P2710AD - N-Channel Transistor

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Datasheet Details

Part number P2710AD
Manufacturer UNIKC
File Size 455.86 KB
Description N-Channel Transistor
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P2710AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 32mΩ @VGS = 10V ID 34A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 34 22 100 Avalanche Current IAS 50 Avalanche Energy L = 0.1mH EAS 125 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.8 62.5 UNITS °C / W REV 1.
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