UNIKC P2710AD
N-Channel Transistor
| Part No. | P2710AD |
|---|---|
| Datasheet | P2710AD Download |
| Manufacturer |  UNIKC |
| Description | N-Channel Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 34 22 100 Avalanche Current IAS 50 Avalanche Energy L = 0.1mH EAS 125 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.8 62.5 UNITS °C / W REV 1.2 1 2014-2-26 P2710AD N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Dra
