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P2B60AMA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
200Ω @VGS = 10V
ID 40mA
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
40 31 120
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.7 0.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V mA
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 178 °C / W
REV 1.
P2B60AMA Datasheet
