P3003EDG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
30mΩ @VGS = -10V
ID -18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
-18 -12 -30
Power Dissipation
TC= 25 °C TC= 70°C
50 20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
SYMBOL Rq JC Rq JA
TYPICAL
MAXIMUM 2.5 70
UNITS °C / W
REV 1.0
1 2014/5/12
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise...
