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P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
4.3 3.4 20
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16.2
Power Dissipation
TA= 25 °C TA =70 °C
PD
1.6 1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
76
Junction-to-Case
RqJC
30
1Pulse width limited by maximum junction temperature.
P4006BV Datasheet
