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P4402FAG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
44mΩ @VGS = -4.5V
ID -5A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -20 VGS ±12
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-4.2 -3.3 -20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.1 0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t≦5sec
Junction-to-Ambient
Steady State
Junction-to-Lead
Steady State
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%.
SYMBOL
RqJA RqJA RqJL
TYPICAL
MAXIMUM 62.
P4402FAG Datasheet
