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P5102FM6
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
51mΩ @VGS = -4.5V
ID -4.2A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-4.2 -3.3 -21
Avalanche Current
IAS -21
Avalanche Energy
L=0.1mH
EAS
22
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.4 0.9
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 85 °C / W
Ver 1.
P5102FM6 Datasheet
