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P6015CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
60mΩ @VGS = 10V
ID 20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
20 15 60
Avalanche Current
IAS 20
Avalanche Energy Repetitive Avalanche Energy2
L = 0.47mH L = 0.47mH
EAS EAR
94 35
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 20
Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P6015CDG Datasheet
