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P9515BDE - N-Channel MOSFET

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Part number P9515BDE
Manufacturer UNIKC
File Size 769.71 KB
Description N-Channel MOSFET
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P9515BDE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 108mΩ @VGS = 10V ID 17A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 17 10 40 Avalanche Current IAS 18 Avalanche Energy L = 1mH EAS 168 Power Dissipation TC = 25 °C TC = 100 °C PD 63 25 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 2 °C / W 62.5 REV 1.
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