PA203EMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
120mΩ @VGS = -10V
ID -2.6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-2.6 -2.1 -10
Power Dissipation
TA = 25 °C TA = 70 °C
1.25 0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL Rq JA Rq JC
TYPICAL
MAXIMUM 100 80
UNITS °C / W
REV 1.1
1 2014/7/28
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise...
