The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PB554DY
Dual Common Drain N-Channel MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 10mΩ @VGS = 4.5V
ID 12A
PDFN 2X5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±10
Continuous Drain Current3 Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
12 9.8 40
Avalanche Current
IAS 23
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.3
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
61
1Pulse width limited by maximum junction temperature.
PB554DY Datasheet
