UNIKC PB560DZ
MOSFET
| Part No. | PB560DZ |
|---|---|
| Datasheet | PB560DZ Download |
| Manufacturer |  UNIKC |
| Description | MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA = 70 °C ID IDM 7.8 6.2 40 Avalanche Current IAS 10 Avalanche Energy3 EAS 4.9 Power Dissipation TA = 25 °C TA= 70 °C PD 2.4 1.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 52 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014-2-12 PB560DZ Dual N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °
