PB560DZ - MOSFET

UNIKC

Datasheet Details

Part number	PB560DZ
Manufacturer	UNIKC
File Size	392.05 KB
Description	MOSFET
Datasheet	PB560DZ Datasheet

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Full PDF Text Transcription (Reference)

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PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 26mΩ @VGS = 4.5V ID 7.8A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA = 70 °C ID IDM 7.8 6.2 40 Avalanche Current IAS 10 Avalanche Energy3 EAS 4.9 Power Dissipation TA = 25 °C TA= 70 °C PD 2.4 1.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 52 1Pulse width limited by maximum junction temperature.