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PD636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 48A
TO-252
100% RG Test 100% UIL Test
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
48 30.5 120
Avalanche Current
IAS 20
Avalanche Energy
L=0.1mH EAS 20.8
Power Dissipation
TC= 25 °C TC= 100°C
PD
37.9 15
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 20A.
PD636BA Datasheet
