PD648BA Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 94 59 170 Avalanche Current IAS 36 Avalanche Energy L =0.1mH EAS 64 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 55A. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2 62.5 UNITS °C / W REV 1.0 1 2014-3-4 PD648BA N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN