PD6A8BA
PD6A8BA is N-Channel MOSFET manufactured by UNIKC.
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 6.2mΩ @VGS = 10V
ID 75A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
75 47 120
Avalanche Current
IAS 35
Avalanche Energy
L =0.1m H
Power Dissipation
TC = 25 °C TC = 100 °C
73 29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 55A.
SYMBOL Rq JC Rq JA
TYPICAL
MAXIMUM 1.7 62.5
UNITS °C / W
REV...
