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PE548EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.4mΩ @VGS = 10V
ID3 58A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
58
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
37 16
Pulsed Drain Current1
TA= 70 °C
IDM
13 160
Avalanche Current
IAS 40
Avalanche Energy
L =0.1mH
EAS
80
TC = 25 °C
25
Power Dissipation
TC = 100 °C TA = 25 °C
PD
10 2
TA = 70 °C
1.
PE548EA Datasheet
