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PI632BZ
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.7mΩ @VGS = 10V
ID 105A
TO-251(IS)
1.GATE 2.DRAIN 3.SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
105 66 200
Avalanche Current
IAS 40.8
Avalanche Energy
L = 0.1mH
EAS
83
Power Dissipation
TC = 25 °C TC = 100 °C
PD
74 29
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A.
PI632BZ Datasheet
