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PK552DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5.7mΩ @VGS = 4.5V
ID 56A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
56 ID 36 IDM 70
Continuous Drain Current
TA = 25 °C TA = 70 °C
17 ID 14
Avalanche Current
IAS 40
Avalanche Energy
L = 0.1mH
EAS 79
Power Dissipation
TC = 25 °C TC = 100 °C
31 PD 12.5
Power Dissipation
TA = 25 °C TA = 70 °C
2.9 PD 1.
PK552DX Datasheet
