PK650DY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 2.8mΩ @VGS = 10V
30V 11mΩ @VGS = 10V
ID CH. 83A Q2 36A Q1
PDFN 5- 6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2 VDS
Q1
30 30
Gate-Source Voltage
Q2 VGS
Q1
±20 ±20
Continuous Drain Current3
TC = 25 °C TC = 100 °C
Q2 Q1 ID Q2 Q1
83 36 52 23
Pulsed Drain Current1
Q2 IDM Q1
130 55
Continuous Drain Current
TA = 25 °C TA = 70 °C
Q2 Q1 ID Q2 Q1
21 10 17 8
Avalanche Current
Q2 IAS
Q1
52 21
Avalanche Energy
L = 0.1m H
Q2 EAS
Q1
135 22
Power...
