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PT542BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V
4mΩ @VGS = 10V
ID 135A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID
135 85
IDM
200
Avalanche Current
IAS
68
Avalanche Energy
L = 0.1 mH
EAS
233
Power Dissipation
TC= 25 °C TC= 100°C
PD
125 50
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 120A.
PT542BA Datasheet
