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PZ0703ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ @VGS = -10V
ID -70A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2,3 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
-70 -44 -160
Avalanche Current
IAS -67
Avalanche Energy
L=0.1mH
EAS
227
Power Dissipation
TC= 25 °C TC= 100°C
PD
78 31
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
ESD Class
HBM
4
UNITS V V
A
mJ W °C KV
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
PZ0703ED Datasheet
