TD381BA
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ @VGS = 10V
ID 52A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID IDM
52 32 120
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1m H
Power Dissipation
TC = 25 °C TC = 100 °C
50 20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 50A
SYMBOL Rq JC
TYPICAL MAXIMUM UNITS 2.5 °C / W
REV 1.1
1 2014-7-11
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise...
